发明名称 SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
摘要 PROBLEM TO BE SOLVED: To provide a lamination type semiconductor device excellent in heat radiating property. SOLUTION: The semiconductor device is composed by laminating a plurality of substrates 112, each having terminals for electrical input/output on its surface and inter-layer sheets 120, each containing a resin base material bonding together the substrates and a thermal conduction material higher than the resin base material in thermal conductivity in a thickness direction. The inter-layer sheet may include a thermal conduction region with the thermal conduction material higher than the resin base material in thermal conductivity embedded out of contact with the substrate. The high thermal conduction material may include a metal or carbon nanotube. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009246258(A) 申请公布日期 2009.10.22
申请号 JP20080093459 申请日期 2008.03.31
申请人 NIKON CORP 发明人 SUGAYA ISAO;TAKI YUSUKE;AOKI GIICHI
分类号 H01L23/34;H01L23/373;H01L25/065;H01L25/07;H01L25/18 主分类号 H01L23/34
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