发明名称 |
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF |
摘要 |
PROBLEM TO BE SOLVED: To provide a lamination type semiconductor device excellent in heat radiating property. SOLUTION: The semiconductor device is composed by laminating a plurality of substrates 112, each having terminals for electrical input/output on its surface and inter-layer sheets 120, each containing a resin base material bonding together the substrates and a thermal conduction material higher than the resin base material in thermal conductivity in a thickness direction. The inter-layer sheet may include a thermal conduction region with the thermal conduction material higher than the resin base material in thermal conductivity embedded out of contact with the substrate. The high thermal conduction material may include a metal or carbon nanotube. COPYRIGHT: (C)2010,JPO&INPIT |
申请公布号 |
JP2009246258(A) |
申请公布日期 |
2009.10.22 |
申请号 |
JP20080093459 |
申请日期 |
2008.03.31 |
申请人 |
NIKON CORP |
发明人 |
SUGAYA ISAO;TAKI YUSUKE;AOKI GIICHI |
分类号 |
H01L23/34;H01L23/373;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L23/34 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|