发明名称 Cu-Ni-Si-Co-BASED COPPER ALLOY FOR ELECTRONIC MATERIAL, AND METHOD FOR PRODUCING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To provide a Cu-Ni-Si-Co-based alloy for an electronic material having excellent spring critical value and stress relaxation properties in addition to strength and conductivity. Ž<P>SOLUTION: Disclosed is a copper alloy for an electronic material comprising, by mass, 1.0 to 2.5% Ni, 0.5 to 2.5% Co and 0.3 to 1.2% Si, and the balance Cu with inevitable impurities, and in which, among the secondary phase grains precipitated into the mother phase, the quantitative density of the ones with grain sizes of 0.1 to 1 μm is 5×10<SP>5</SP>to 1×10<SP>7</SP>pieces/mm<SP>2</SP>. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
申请公布号 JP2009242890(A) 申请公布日期 2009.10.22
申请号 JP20080092406 申请日期 2008.03.31
申请人 NIPPON MINING & METALS CO LTD 发明人 ERA NAOHIKO;KUWAGAKI HIROSHI
分类号 C22C9/06;C22C9/10;C22F1/00;C22F1/02;C22F1/08;H01B1/02;H01B13/00;H01L23/48 主分类号 C22C9/06
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