| 发明名称 |
AMORPHOUS OXIDE AND THIN FILM TRANSISTOR |
| 摘要 |
<p>The present invention relates to an amorphous oxide and a thin film transistor using the amorphous oxide. In particular, the present invention provides an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 , and a thin film transistor using such an amorphous oxide. In a thin film transistor having a source electrode 6, a drain electrode 5, a gate electrode 4, a gate insulating film 3, and a channel layer 2, an amorphous oxide having an electron carrier concentration less than 10 18 /cm 3 is used in the channel layer 2.</p> |
| 申请公布号 |
EP1737044(A4) |
申请公布日期 |
2009.10.21 |
| 申请号 |
EP20050719601 |
申请日期 |
2005.02.28 |
| 申请人 |
JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
HOSONO, HIDEO;HIRANO, MASAHIRO;OTA, HIROMICHI;KAMIYA, TOSHIO;NOMURA, KENJI |
| 分类号 |
H01L29/786;G02F1/1345;G02F1/1368;H01L21/363;H01L21/77;H01L21/84 |
主分类号 |
H01L29/786 |
| 代理机构 |
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