| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride-based group III-V compound semiconductor device which has superior electrical characteristics and low dislocation density for the nitride-based group III-V compound semiconductor on a buffer layer of the device. SOLUTION: The method of manufacturing the nitride-based group III-V compound semiconductor device includes steps of: forming the buffer layer 72 of AlN on an SiC substrate 71; growing a GaN layer on the buffer layer 72 of AlN; forming an amorphous layer 74, in the vicinity of an interface between the buffer layer 72 of AlN and the GaN layer, by implanting Ga ions into a vicinity of the interface between the buffer layer 72 of AIN and the GaN layer; and forming a GaN layer 75 with low dislocation density, by recrystallizing the GaN layer on the amorphous layer 74 through the rise in the temperature of the substrate of up to 800°C. COPYRIGHT: (C)2010,JPO&INPIT
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