发明名称 |
MEMS-topped integrated circuit with a stress relief layer and method of forming the circuit |
摘要 |
The bow in a wafer that results from fabricating a large number of MEMS devices on the top surface of the passivation layer of the wafer so that a MEMS device is formed over each die region is reduced by forming a stress relief layer between the passivation layer and the MEMS devices.
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申请公布号 |
US2009256236(A1) |
申请公布日期 |
2009.10.15 |
申请号 |
US20080082208 |
申请日期 |
2008.04.09 |
申请人 |
SMEYS PETER;JOHNSON PETER |
发明人 |
SMEYS PETER;JOHNSON PETER |
分类号 |
H01L27/00;H01L21/02 |
主分类号 |
H01L27/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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