发明名称 MEMS-topped integrated circuit with a stress relief layer and method of forming the circuit
摘要 The bow in a wafer that results from fabricating a large number of MEMS devices on the top surface of the passivation layer of the wafer so that a MEMS device is formed over each die region is reduced by forming a stress relief layer between the passivation layer and the MEMS devices.
申请公布号 US2009256236(A1) 申请公布日期 2009.10.15
申请号 US20080082208 申请日期 2008.04.09
申请人 SMEYS PETER;JOHNSON PETER 发明人 SMEYS PETER;JOHNSON PETER
分类号 H01L27/00;H01L21/02 主分类号 H01L27/00
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