| 摘要 |
An apparatus and method for detecting defects in a wafer are provided. An optical part is disposed under an inspection stage and radiates infrared light onto the wafer disposed on an inspection region formed of a transmissive material on the inspection stage. An image obtaining part detects the infrared light transmitted through the wafer disposed on the inspection stage to output an image signal. A conveying part conveys the image obtaining part or the inspection stage in a short side direction of a photographing region of a line sensor included in the image obtaining part, and outputs a pulse signal having a predetermined period corresponding to a relative straight moving distance between the image obtaining part and the inspection stage. A controller counts the pulse signal and outputs a photographing instruction signal controlling the image obtaining part to photograph the wafer whenever the wafer is conveyed in the short side direction of the photographing region of the line sensor toward the image obtaining part by a distance corresponding to the length of short sides of the photographing region. A defect detection part combines each image signal to generate an inspection image corresponding to the wafer, and detects positions of defects existing in the wafer. Each of the line sensors transmits charges accumulated therein to an adjacent line sensor when a photographing instruction signal is input, and then detects the infrared light transmitted through the wafer, and the line sensor positioned at an end in an opposite direction of the conveyance direction outputs charges accumulated therein as the image signal from a time when the number of input photographing signals exceeds the number of line sensors.
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