发明名称 Semiconductor device having resistance based memory array, method of reading, and writing, and systems associated therewith
摘要 One embodiment includes a non-volatile memory cell array, and a read unit configured to disable read operation for the non-volatile memory cell array for a time period following writing of data in the non-volatile memory cell array.
申请公布号 US2009257292(A1) 申请公布日期 2009.10.15
申请号 US20080292897 申请日期 2008.11.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE KWANG JIN;KIM DU EUNG;LEE YONG JUN
分类号 G11C7/22 主分类号 G11C7/22
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