| 摘要 |
<P>PROBLEM TO BE SOLVED: To inexpensively achieve a high-speed property required for an on-board infrared image sensor, and increase of sensitivity of a dark place-monitoring image sensor. Ž<P>SOLUTION: The semiconductor imaging element includes: a first conductivity type semiconductor substrate 1; a photodiode PD using, as a photoelectric conversion region, a depletion layer region 3 produced in a PN junction part to a second conductivity type semiconductor 2 locally formed on its front surface side; and a pixel circuit 10 formed on the front surface side of the semiconductor substrate 1, and constituting a CMOS image sensor along with the photodiode PD. The semiconductor imaging element is structured such that a cavity 4 is formed on the semiconductor substrate 1, and light is emitted to the photoelectric conversion region of the photodiode PD from the backside (or a side surface or front surface side) of the semiconductor substrate 1 through the cavity 4. Accordingly, an injected infrared ray can pass, for a long time, through the PN junction part of the photodiode where its signal absorption is largest. By forming a reflective film 5, reflected light passes through the PN junction part again, and thereby sensitivity is further increased. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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