| 发明名称 |
METHOD OF LASER ANNEALING SEMICONDUCTOR LAYER AND SEMICONDUCTOR DEVICES PRODUCED THEREBY |
| 摘要 |
A laser annealing method includes forming a nitrogen-doped layer on a semiconductor layer, the nitrogen-doped layer having a nitrogen concentration of at least 3x1020 atoms/cc, irradiating a first area of the nitrogen-doped layer in a low oxygen environment with a laser beam and irradiating a second area of the nitrogen-doped layer in a low oxygen environment with a laser beam, a part of the second area overlapping with the first area.
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| 申请公布号 |
US2009256172(A1) |
申请公布日期 |
2009.10.15 |
| 申请号 |
US20090419588 |
申请日期 |
2009.04.07 |
| 申请人 |
LIM KIAN KIAT;NAKAMURA ATSUSHI;TAN KAI PHENG;LIM ENG SOON;FU PHO LING;KAMIMURA TAKAAKI |
发明人 |
LIM KIAN KIAT;NAKAMURA ATSUSHI;TAN KAI PHENG;LIM ENG SOON;FU PHO LING;KAMIMURA TAKAAKI |
| 分类号 |
H01L21/00;H01L21/20;H01L21/26;H01L21/265;H01L21/336;H01L21/425;H01L29/78;H01L29/786 |
主分类号 |
H01L21/00 |
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