| 摘要 |
<p>PURPOSE: A manufacturing method of a semiconductor device is provided to stably form a fine hole pattern of irregular arrangement without development of an exposure tool for securing resolution of a light source. CONSTITUTION: A layer(210) to be etched, a first hard mask layer, an oxide film, and a second hard mask layer are formed on a semiconductor substrate(200). A photosensitive pattern for defining a first contact hole is formed on the second hard mask layer. The first contact hole is formed by etching the second hard mask layer after using the photosensitive pattern as a mask. After removing the photosensitive pattern, a hard mask nitride film is formed on a whole surface. The hard mask nitride film remains in a sidewall of the first contact hole by etching a front surface of the hard mask nitride film. A second contact hole is formed by etching the first hard mask layer after using the hard mask nitride film and the second hard mask layer as a mask. A hole pattern(290) is formed by etching the layer to be etched exposed in a bottom part of the second contact hole.</p> |
