| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem, when an LDD structure with sidewall spacers is adopted for a semiconductor nonvolatile memory element which is provided with gate electrodes for a memory transistor and for a transistor for control opposed in the direction of the gate length and arranged in parallell in the same element region, that the sidewall spacers in the region where the gate electrodes are opposed to each other make contacts and a common diffusion area can not be formed, if the spacing between the gate electrodes becomes smaller with the miniaturization of the device. Ž<P>SOLUTION: In the semiconductor device, the thickness in the direction parallel to a semiconductor substrate of sidewall spacers which are arranged on sidewalls of gate electrodes on the side where the gate electrodes are opposed to each other is smaller than that of those on the side where they are not opposed to each other. By this construction, a common diffusion area can be arranged in a region where the gate electrodes are opposed to each other. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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