发明名称 HEAT TREATMENT EQUIPMENT
摘要 PROBLEM TO BE SOLVED: To improve within-wafer nonuniformity of temperature distribution on a substrate in heat treatment. SOLUTION: In heat treatment equipment 100, a conveyance opening 511 that can be opened or closed by a gate valve 6 is formed. A shielding member 61 having the gate valve 6 is formed so that its top surface 611 (a surface opposing the inside of the cylinder of a reflector 1) is flush with the inner surface of a reflection plate 11a while being placed at a closed position P1. Also, the top surface 611 is, for example, machined to have the same reflectance as that of the reflection plate 11a. Therefore, while the shielding member 61 is placed at the closed position P1, a reflection plane that has no irregularities and has a uniform reflectance is formed by the inner surface of the reflection plate 11a and the top surface 611 of the shielding member 61, thus forming uniform radiation flux on the substrate W held by a holding section 2 and improving within-wafer nonuniformity of temperature distribution on the substrate W in heat treatment. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2009231608(A) 申请公布日期 2009.10.08
申请号 JP20080076379 申请日期 2008.03.24
申请人 DAINIPPON SCREEN MFG CO LTD 发明人 KUSUDA TATSUFUMI
分类号 H01L21/26 主分类号 H01L21/26
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