| 发明名称 |
Nanocrystal structures |
| 摘要 |
A structure including a grating and a semiconductor nanocrystal layer on the grating, can be a laser. The semiconductor nanocrystal layer can include a plurality of semiconductor nanocrystals including a Group II-VI compound, the nanocrystals being distributed in a metal oxide matrix. The grating can have a periodicity from 200 nm to 500 nm.
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| 申请公布号 |
US2009253224(A1) |
申请公布日期 |
2009.10.08 |
| 申请号 |
US20080275800 |
申请日期 |
2008.11.21 |
| 申请人 |
MASSACHUSETTS INSTITUTE OF TECHNOLOGY |
发明人 |
EISLER HANS J.;SUNDAR VIKRAM C.;WALSH MICHAEL E.;KLIMOV VICTOR I.;BAWENDI MOUNGI G.;SMITH HENRY I. |
| 分类号 |
B82B1/00;H01L33/00;C30B5/00;G02B6/122;H01L21/20;H01L21/36;H01L29/06;H01L29/20;H01L29/22;H01L29/26;H01S5/12 |
主分类号 |
B82B1/00 |
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