发明名称 |
Halbleiterbauelement und Versorgungsleitungsanordnungsverfahren |
摘要 |
The semiconductor memory has pad power lines (PVSS1,PVSS1'',PVDD1,PVDD1'') arranged below the lower pads in the pad structures (PVDD,PVSS), in a direction crossing the pad structures to interconnect the pad structures transmitting the same level of electrical power. The sub-pad power lines are arranged in a direction perpendicular to the pad power lines. An independent claim is also included for method of power line arrangement in semiconductor memory. |
申请公布号 |
DE102005045697(B4) |
申请公布日期 |
2009.10.08 |
申请号 |
DE20051045697 |
申请日期 |
2005.09.20 |
申请人 |
SAMSUNG ELECTRONICS CO. LTD. |
发明人 |
KIM, SUNG-HOON;CHO, YOUNG-CHUL;PARK, KWANG-IL;JANG, SEONG-JIN |
分类号 |
H01L23/528;G11C5/14;H01L21/768;H01L27/10 |
主分类号 |
H01L23/528 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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