| 摘要 |
PROBLEM TO BE SOLVED: To provide a silicon carbide semiconductor device, having a vertical power element capable of preventing side electric discharge from occurring. SOLUTION: A conductive layer 9 is provided at an upper portion of an n<SP>-</SP>-type drift layer 2, for example, on the surface of a passivation film 6, so that an anode electrode is surrounded, thus isopotential is attained instantaneously by the conductive layer 9, even if a high voltage is applied to the anode electrode, and potential is biased from the anode electrode to the end face of a semiconductor chip. Hence, side electric discharge is made less apt to occur, and element breakdown caused by the side electric discharge is restrained. COPYRIGHT: (C)2010,JPO&INPIT |
