THE METHOD FOR MANUFACTURING NON-VOLATILE MEMORY DEVICE HAVING CHARGE TRAP LAYER

摘要

PURPOSE: A method for manufacturing a nonvolatile memory device with a charge trap layer is provided to progress a deposition speed while forming the charge trap layer with triple layers. CONSTITUTION: A tunneling layer is formed on a semiconductor substrate(200). A first charge trap layer including a silicon rich silicon nitride layer is formed on the tunneling layer. A second charge trap layer including the silicon rich silicon nitride layer is formed on the first charge trap layer. The third charge trap layer including a stoichiometric silicon nitride layer is formed on the second charge trap layer. The charge trap layer with the structure stacking the first, second, and third charge trap layers. The shielding layer and a control gate electrode are formed on the charge trap layer.