| 摘要 |
The production of an integrated circuit device comprises forming a guard ring pattern on a first insulating layer to enclose a fuse line; and partially etching a second insulating layer to remove a portion of the second insulating layer in the fuse portion of the integrated circuit device enclosed by a guard ring pattern exposing a portion of the first insulating layer and to form a via hole outside the fuse portion of the integrated circuit device. The production of an integrated circuit device comprises forming a fuse line (147c) at a fuse portion of the integrated circuit device; forming a first insulating layer on the fuse line; forming a guard ring pattern on the first insulating layer to enclose the fuse line; forming a second insulating layer on the guard ring pattern and the first insulating layer; and partially etching the second insulating layer to remove a portion of the second insulating layer in the fuse portion of the integrated circuit device enclosed by the guard ring pattern exposing a portion of the first insulating layer and to form a via hole outside the fuse portion of the integrated circuit device. An independent claim is also included for a fuse box of an integrated circuit device comprising a fuse line at a fuse portion of the integrated circuit device; a first insulating layer on the fuse line; a first guard ring pattern that encloses the fuse line on the first insulating layer; a second insulating layer on the first guard ring pattern and the first insulating layer; and a second guard ring pattern that encloses the fuse line on the second insulating layer; and a passivation layer on the second insulating layer and the second guard ring pattern, wherein the passivation layer defines at least a portion of a fuse opening having a sidewall in the first and second insulating layers and the passivation layer extends on the sidewall of the fuse opening to at least the first insulating layer. |
