| 摘要 |
<p>A method of forming gallium arsenide (GaAs)-on-insulator including providing a substrate and forming a diffusion barrier layer of a compound of formula Al,Ga1_,As on the substrate. A layer of GaAs is formed on the diffusion barrier layer of Al,,Ga1_,,As. The layer of Al,,Ga1_ ,BAs is substantially completely oxidised to transform the layer of Al,,Ga1_,,As into an electrical insulator as well as a diffusion barrier.</p> |
