SILICON OXIDE SINTERED COMPACT FOR FILM VAPOR DEPOSITION, METHOD FOR PRODUCING THE SAME, AND METHOD FOR PRODUCING SILICON OXIDE VAPOR DEPOSITION FILM

摘要

PROBLEM TO BE SOLVED: To provide a silicon oxide sintered compact for film vapor deposition which can stably prevent the occurrence of a defect such as pinholes on a film caused by splashes being the conventional problem, by using the silicon oxide sintered compact as a film vapor deposition material, thus enables a wrapping material having excellent gas barrier properties and reliability to be stably produced, and to provide a method for producing the silicon oxide sintered compact for film vapor deposition by which inexpensive and mass-producible silicon oxide sintered compact can be supplied to the market without requiring a special technique.

SOLUTION: The silicon oxide sintered compact for film vapor deposition has density of 1.0 to 2.0 g/cm3, three-point bending strength of≥50 g/mm2and a BET specific surface area of 0.1 to 20 m2/g.

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