| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, as well as, its manufacturing method, which can suppress deterioration in the drain current characteristics caused by increasing the thickness of the gate insulating film near an element isolation region. SOLUTION: A semiconductor device may include a semiconductor substrate; an element isolation region which is formed in the semiconductor substrate and includes an oxide layer and an oxidant diffusion prevention layer located on the oxide layer; a gate insulating film formed on the semiconductor substrate and the oxidant diffusion prevention layer; and a gate electrode formed on the gate insulating film. COPYRIGHT: (C)2009,JPO&INPIT
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