CURRENT DRIVEN MAGNETIC DOMAIN WALL MOVEMENT MEMORY DEVICE, OPERATING METHOD OF THE SAME, AND FORMING METHOD OF THE SAME

摘要

A current driven magnetic domain wall movement memory device, an operating method and a forming method thereof are provided to improve the moving speed of magnetic domain wall by arranging a data storage pattern including a ferromagnetic material and a junction pattern of non-magnetic conductive material. A current driven magnetic domain wall movement memory device comprises a data storage pattern(110) including unit regions(113) arranged on a substrate and a ferromagnetic material, and a junction pattern(120) made of non-magnetic conductor and progressing in contact with the data storage pattern. The amount of conductive electron of the data storage pattern is increased by the contact between the data storage pattern and the junction pattern. The mean free path by the thermal motion of conductive electron of the data storage pattern is greater than the total thickness of the data storage pattern and the junction pattern.