发明名称 LOW-DEFECT-DENSITY CRYSTALLINE STRUCTURE AND METHOD FOR MAKING SAME
摘要 <p>A low-defect-density crystalline structure comprising a first crystalline material, a layer of second crystalline material epitaxially grown on the first crystalline material, and a layer of third crystalline material epitaxially grown on the second layer such that the second layer is positioned between the first crystalline material and the third crystalline material. The second and third crystalline materials cooperate to form a desirable relationship. The crystalline structures of the second crystalline material and third crystalline material have a higher crystalline compatibility than the first crystalline material and third crystalline material. The layer of second crystalline material is sufficiently thick to form the desirable relationship with the third crystalline material but sufficiently thin for the layer of second crystalline material to be strained. The layer of third crystalline material is grown to a thickness beyond a thickness had the third layer been grown on an unstrained second layer.</p>
申请公布号 WO2009088883(A3) 申请公布日期 2009.09.11
申请号 WO2008US88575 申请日期 2008.12.30
申请人 THE BOARD OF REGENTS OF THE UNIVERSITY OF OKLAHOMA;MADHAVIE, EDIRISOORIYA;MISHIMA, TETSUYA;SANTOS, MICHAEL, B. 发明人 MADHAVIE, EDIRISOORIYA;MISHIMA, TETSUYA;SANTOS, MICHAEL, B.
分类号 H01L21/20 主分类号 H01L21/20
代理机构 代理人
主权项
地址