Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
摘要
Semiconductor structures having at least one quantum well heterostructure grown strain-free on Si(100) via a Sn1-xGex buffer layer and their uses are provided.
申请公布号
US7582891(B2)
申请公布日期
2009.09.01
申请号
US20050663024
申请日期
2005.09.16
申请人
ARIZONA BOARD OF REGENTS, A CORPORATE BODY ORGANIZED UNDER ARIZONA LAW, ACTING ON BEHALF OF ARIZONASTATE UNIVERSITY
发明人
KOUVETAKIS JOHN;MENENDEZ JOSE;TOLLE JOHN;LIAO LING;SAMARA-RUBIO DEAN
