发明名称 |
MULTI-GRAY SCALE PHOTOMASK AND MANUFACTURING METHOD THEREOF, AND PATTERN TRANSFER METHOD |
摘要 |
<p>A gray-scale photomask, and a manufacturing method thereof and a pattern transcription method are provided to reduce the length of the gate by maintaining the current path on the floor side of the trench using the buried layer. The first resist pattern is formed on the light-shielding layer(12). The first light-shielding layer pattern is formed by etching the light-shielding layer. The light-transmitting region is formed by etching the translucent film(14) using the first resist pattern or the first light-shielding layer pattern as a mask. The second resist pattern is formed on the fixed region of the first light-shielding layer pattern. The first translucent film is formed by etching the light-shielding layer using the second resist pattern as the mask. The third resist pattern is formed on the other region of the first light-shielding layer pattern.</p> |
申请公布号 |
KR20090092238(A) |
申请公布日期 |
2009.08.31 |
申请号 |
KR20090015622 |
申请日期 |
2009.02.25 |
申请人 |
HOYA CORPORATION |
发明人 |
SANO MICHIAKI;IMURA KAZUHISA |
分类号 |
H01L21/027;G03F1/00;G03F1/68 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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