发明名称 RESIST COMPOSITION AND RESIST PATTERN FORMING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a resist composition which suppresses variation in optimum exposure energy in the formation of a predetermined resist pattern due to the influence of elapsed time, and a resist pattern forming method using the same. <P>SOLUTION: The resist composition comprises a base component (A) whose solubility in an alkali developer changes by the action of an acid, an acid generator component (B) comprising a compound (B1) represented by general formula (b1-1) (wherein Q<SP>1</SP>is a divalent linking group containing an ester bond; Y<SP>1</SP>is a 1-4C alkylene group or fluorinated alkylene group; X is a 3-30C hydrocarbon group; and A<SP>+</SP>is an organic cation), and a nitrogen-containing organic compound (D1) prepared by substituting at least one hydrogen atom of ammonia NH<SB>3</SB>by -R<SP>1</SP>-O-R<SP>2</SP>(wherein R<SP>1</SP>is a 1-10C alkylene group; and R<SP>2</SP>is a 1-10C alkyl group which may have a carbonyl group, an ester bond or an ether bond). <P>COPYRIGHT: (C)2009,JPO&INPIT
申请公布号 JP2009193036(A) 申请公布日期 2009.08.27
申请号 JP20080036733 申请日期 2008.02.18
申请人 TOKYO OHKA KOGYO CO LTD 发明人 SESHIMO TAKEHIRO;UTSUMI YOSHIYUKI;KAWAKAMI AKINARI;HANEDA HIDEO
分类号 G03F7/039;G03F7/004;H01L21/027 主分类号 G03F7/039
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