METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device comprises the steps of forming a pillar-shaped first conductive type semiconductor layer on a planar semiconductor layer, forming a second conductive type semiconductor layer in a planar semiconductor layer on the lower portion the layer, forming a gate insulating film and a gate electrode composed of a laminate structure of metal and amorphous silicon or polysilicon on the periphery of the first conductive type semiconductor layer, forming a second insulating film and a first insulating film in the shape of a side wall on the upper portion of a gate and the upper side wall of the first conductive type semiconductor layer, forming the second insulating film and the first insulating film in the shape of the side wall on the side wall of the gate, forming the second conductive type semiconductor layer on the upper portion of the first conductive type semiconductor layer, forming a compound of metal and a semiconductor in the second conductive type semiconductor layer formed in the planar semiconductor layer on the lower portion of the first conductive type semiconductor layer, forming the compound of the metal and the semiconductor in the second conductive type semiconductor layer formed on the upper portion of the first conductivetype semiconductor layer, forming the compound of the metal and the semiconductor in the gate, forming a contact on the second conductive type semiconductor layer formed in the planar semiconductor layer on the lower portion of the first conductive type semiconductor layer, and forming the contact on the second conductive type semiconductor layer formed on the upper portion of the first conductive type semiconductor layer.