| 摘要 |
A method of forming the trench isolation layer for semiconductor device is provided to prevent the overhang formation of the insulating layer due to the deformation of the insulating layer. The trench(108) is formed on the device isolation region of the semiconductor substrate(102). The insulating layer is formed on the trench. The dopant gas removal process is performed on the insulating layer. The dopant gas removal process includes the cleaning process on the insulating layer. The anisotropic conductive film(104) for floating gate is formed on the tunnel insulation layer(103). The photoresist pattern is formed on the hard mask film(106).
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