| 摘要 |
PROBLEM TO BE SOLVED: To provide a fabrication method of a semiconductor device by which abnormal growth of silicide on a source/drain can be suppressed and shallow junction of the source/drain can be maintained. SOLUTION: The fabrication method of the semiconductor device includes: forming a gate insulating film 104 and a gate electrode 105a on an N-type well 103a; forming a first source/drain region 111c by implanting a first element in regions of the N-type well 103a on both sides of the gate electrode 105a, the first element being larger than silicon and exhibiting P-type conductivity; forming a second source/drain region 111d by implanting a second element in the regions of the N-type well 103a on both sides of the gate electrode 105a, the second element being smaller than silicon and exhibiting P-type conductivity; and forming a metal silicide layer 112 on the source/drain region 111a. COPYRIGHT: (C)2009,JPO&INPIT
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