| 摘要 |
Providing a technology capable of obtaining a desired resistance value through preferable controllability, and improving linearity between voltage and current. A semiconductor bulk resistance element of the present invention comprise a semiconductor chip having a main surface (first main surface), and on the first main surface of a semiconductor resistor layer (an n-type semiconductor region) to work as a bulk resistor, a guard ring layer (a p+ type semiconductor region) of a conductive type opposite to the semiconductor resistor layer is formed, and a contact layer (an n++ type semiconductor region) that goes through the guard ring layer and is of a conductive type same as the semiconductor resistor layer, has a higher impurity concentration than that of the semiconductor resistor layer and the guard ring layer is formed, and on the top of the contact layer and at the bottom of the semiconductor resistor layer, semiconductor regions (n++ type semiconductor regions) that have ohmic contact with electrodes and are of a conductive type same as the semiconductor resistor layer, and has an impurity concentration same as or higher than that of the contact layer are adjacently arranged respectively. |
