| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device having SRAM cells which can be manufactured in small sizes while maintaining performance. SOLUTION: The device includes a plurality of static random access memory cells 300 each of which includes a pair of driver transistors 302a and 302b each including a pFET, a pair of load transistors 304a and 304b each including an nFET, and a pair of transfer gates 306a and 306b each including a pFET. COPYRIGHT: (C)2009,JPO&INPIT
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