| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a plasmon resonance detector, capable of detecting the temperature change of an optical device, or the like, using a metal structure having plasmon resonance absorption. <P>SOLUTION: A diode composed of a conductive substrate 12, an n-type semiconductor layer 13, an i-type semiconductor layer 14, a p-type semiconductor layer 15, an n-electrode (a negative electrode) 11, a p-electrode (a positive electrode) 17, an insulating film 16, and the like, is used as a semiconductor whose resistance value changes with the change of temperature, and a nano-chain 2 with a plurality of metal nanoparticles connected is arranged on the diode. With the irradiation of light, the nano-chain 2 generates heat, and heat generated at the nano-chain is transferred to the diode; but since the resistance value of the diode changes with the change of temperature, this change is read to measure the temperature or heating value of the nano-chain 2 and to detect the presence and intensity of plasmon resonance. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
