| 摘要 |
A semiconductor memory device having a refresh function to restore data stored in a memory cell, comprises a delay switching block for delaying a signal for deactivating a word line in a self-refresh operation as compared with the signal in a CBR refresh operation. The delay switching block comprises: a first signal path for allowing the signal for deactivating the word line to pass; a second signal path for delaying the signal for deactivating the word line by a predetermined time; and a path selecting block for selecting the first signal path in the CBR refresh operation, and for selecting the second signal path in the self-refresh operation.
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