| 摘要 |
PROBLEM TO BE SOLVED: To perform without fail lamination of a semiconductor chip on another semiconductor chip on the side of a wafer with no high precision required when manufacturing a semiconductor chip by the CoW (Chip on Wafer) technique. SOLUTION: On the surface side of the wafer W on which a plurality of first chips 1 are formed, a division groove 5 having a depth corresponding to the finish thickness of the first chip 1 is formed along a division-scheduled line 4 (division groove formation process), then, an already existing second chip 2 is laminated on the first chip 1 (lamination process), the surface of the second chip 2 is coated with a protective member (protective member coating process), and then the backside of the wafer is ground until the division groove surfaces to the outside and the thickness of the first chip 1 becomes the finish thickness t (division process), and thus a semiconductor device with two-layer structure is obtained. COPYRIGHT: (C)2009,JPO&INPIT
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