| 摘要 |
A non-volatile memory device includes a substrate, an active region, an isolation layer, a tunnel insulation layer, a floating gate, a dielectric layer and a control gate. The active region includes an upper active region having a first width, and a lower active region beneath the upper active region and having a second width substantially larger than the first width. The isolation layer is adjacent to the active region. The tunnel insulation layer is on the upper active region. The floating gate is on the tunnel insulation layer and has a third width substantially larger than the first width. The dielectric layer is on the floating layer. The control gate is on the dielectric layer.
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