发明名称 Deposition Method and Method for Manufacturing Light-Emitting Device
摘要 A first substrate which includes a reflective layer having an opening, a light-absorbing layer, and a material layer formed in contact with the light-absorbing layer over one of surfaces is provided; the surface of the first substrate over which the material layer is formed and a deposition target surface of the second substrate are disposed to face each other; and irradiation with laser light whose repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat a part of the material layer at a position overlapping with the opening of the reflective layer and deposit the part of the material layer over the deposition target surface of the second substrate.
申请公布号 US2009197017(A1) 申请公布日期 2009.08.06
申请号 US20090362105 申请日期 2009.01.29
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 TANAKA KOICHIRO;IBE TAKAHIRO;YOKOYAMA KOHEI;IKEDA HISAO;TAKESUE NORIFUMI
分类号 B01J19/12 主分类号 B01J19/12
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