| 摘要 |
PROBLEM TO BE SOLVED: To provide a film deposition apparatus and a film deposition method by which the generation of particles can be suppressed and a dense thin film having a high film density can be deposited continuously at a high rate. SOLUTION: In the film deposition apparatus, a long size substrate is transferred through a prescribed transfer passage by a transfer means and a prescribed film is deposited on the substrate in a film deposition section. The film deposition section includes: the first and second flat plate electrodes which are arranged parallelly and oppositely to each other at a prescribed interval in the transfer passage; an electric power source section for applying a high frequency voltage to the first flat plate electrode; and a raw material gas supply means for supplying a raw material gas for forming a film between the first and second flat plate electrodes at an angle inclined by 0-45°with respect to the surface of the second flat plate electrode, in the direction toward the second flat plate electrode from the first flat plate electrode. Further, the transfer means transfers the substrate through between the first and second flat plate electrodes. COPYRIGHT: (C)2009,JPO&INPIT
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