| 摘要 |
An etching method of silicon containing anti-refractive coating layer is provided to etch the feature part of anti-refractive coating layer by reducing the critical dimension bias. A substrate equipped with the multilayer mask is arranged in a plasma processing system(510). The multilayer mask comprises a lithographic layer which is put on the silicon containing anti-refractive coating layer. The lithographic layer comprises a feature part pattern which is formed by the lithographic process(520). The feature part pattern including the second critical dimension of the second mask layer is transferred to the second mask layer(530). Offset between the second critical dimension bias and the first critical dimension bias is reduced(540). The process gas including SF6 is introduced to the plasma processing system.
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