发明名称 |
Method of producing a large-sized substrate |
摘要 |
A large-sized substrate (1) having a diagonal length of not less than 500mm and a ratio of flatness/diagonal length of not more than 6.0x10<-6> is disclosed. By use of the large-sized substrate (1) for exposure of the present invention, the exposure accuracy, particularly the register accuracy and resolution are enhanced, so that it is possible to achieve high-precision exposure of a large-sized panel. With the processing method according to the present invention, it is possible to stably obtain a large-sized photomask substrate with a high flatness, and since the dimensional accuracy at the time of exposure of the panel is enhanced, it is possible to perform exposure of a fine pattern, leading to a higher yield of the panel. Furthermore, by applying the processing method according to the present invention, it is also possible to create an arbitrary surface shape. <IMAGE> <IMAGE> |
申请公布号 |
EP1333313(B1) |
申请公布日期 |
2009.07.29 |
申请号 |
EP20030250602 |
申请日期 |
2003.01.31 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
SHIBANO, YUKIO;MIHARADA, SATORU;UEDA, SHUHEI;WATABE, ATSUSHI;TABATA, MASAKI |
分类号 |
G02F1/13;B24B7/00;B24B13/015;B24B37/04;B24C1/00;B24C3/04;C03C19/00;G02F1/1333;G03F1/00;G03F1/60;G03F1/68 |
主分类号 |
G02F1/13 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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