发明名称 ETCHING COMPOSITION AND METHOD FOR FABRICATING METAL PATTERN USING THE SAME
摘要 An etchant composition, and a method for forming a metal pattern by using the composition are provided to prevent the generation of residue, thereby improving the driving characteristic of a liquid crystal display device. An etchant composition for a single or multilayered film comprising at least one metal of an aluminum-based metal and a molybdenum-based metal, and an indium-based oxide film comprises nitric acid (HNO3) 1 ~ 15 weight%; sulfuric acid (H2SO4) 1 ~ 15 weight%; a potassium salt compound 0.1 ~ 5 weight%; and water 70 ~ 98 weight%. The etchant composition does not contain phosphoric acid (H3PO4).
申请公布号 KR20090081549(A) 申请公布日期 2009.07.29
申请号 KR20080007475 申请日期 2008.01.24
申请人 DONGWOO FINE-CHEM CO., LTD. 发明人 PARK, YOUNG CHUL;LIM, MIN KI
分类号 C09K13/04;C23F1/10;C23F1/14;C23F1/20 主分类号 C09K13/04
代理机构 代理人
主权项
地址