发明名称 |
ETCHING COMPOSITION AND METHOD FOR FABRICATING METAL PATTERN USING THE SAME |
摘要 |
An etchant composition, and a method for forming a metal pattern by using the composition are provided to prevent the generation of residue, thereby improving the driving characteristic of a liquid crystal display device. An etchant composition for a single or multilayered film comprising at least one metal of an aluminum-based metal and a molybdenum-based metal, and an indium-based oxide film comprises nitric acid (HNO3) 1 ~ 15 weight%; sulfuric acid (H2SO4) 1 ~ 15 weight%; a potassium salt compound 0.1 ~ 5 weight%; and water 70 ~ 98 weight%. The etchant composition does not contain phosphoric acid (H3PO4).
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申请公布号 |
KR20090081549(A) |
申请公布日期 |
2009.07.29 |
申请号 |
KR20080007475 |
申请日期 |
2008.01.24 |
申请人 |
DONGWOO FINE-CHEM CO., LTD. |
发明人 |
PARK, YOUNG CHUL;LIM, MIN KI |
分类号 |
C09K13/04;C23F1/10;C23F1/14;C23F1/20 |
主分类号 |
C09K13/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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