发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes a semiconductor substrate, a copper-containing metal interconnect over the semiconductor substrate, and a copper-containing connection plug, and the metal interconnect includes metal elements other than copper, and a concentration of different metal elements in a connection portion between the metal interconnect and the connection plug is higher than a concentration of the different metal elements in a center portion of the metal interconnect, and higher than a concentration of different elements in upper face portion of the metal interconnect other than the connection portion.
申请公布号 US7566975(B2) 申请公布日期 2009.07.28
申请号 US20050071478 申请日期 2005.03.04
申请人 NEC ELECTRONICS CORPORATION 发明人 MOTOYAMA KOICHI
分类号 H01L23/48;H01L21/3205;H01L21/4763;H01L21/768;H01L23/52;H01L23/522;H01L23/532 主分类号 H01L23/48
代理机构 代理人
主权项
地址