| 摘要 |
A semiconductor device and a manufacturing method thereof are provided to easily perform a fuse cutting process by relieving a stress applied to a bottom part of a fuse. A semiconductor device includes a dummy isolation film(120), a dummy tap(130), an interlayer insulation film, and a fuse(140). The dummy isolation film is formed on a top part of a semiconductor substrate(100). The dummy tap is formed in both sides of the dummy isolation film. The interlayer insulation film is formed on a top part of the semiconductor substrate including the dummy isolation film and the dummy tap. The fuse is formed on a top part of the interlayer insulation film.
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