| 摘要 |
PURPOSE: A fabrication method of a TFT substrate of an LCD device is provided to omit an aluminum etching process that should be performed after a stripping process, by using an effect of exposed aluminum corroding, thereby simplifying a fabrication process. CONSTITUTION: Gate lines(22,24,26) consisting of the first gate line layers and the second gate line layers are formed on an insulating substrate. A gate insulating film covers the gate lines(22,24,26) on the insulating substrate. Semiconductor layers(40) are formed on top of the gate insulating film. Resistive contact layers are deposited on the semiconductor layers(40). Data lines(62,65,66,68) are formed on the resistive contact layers and the gate insulating film. A protective film is deposited on the data lines(62,65,66,68) and the semiconductor layers(40). Contact holes(76,78) are formed on the protective film. A pixel electrode(82) is electrically connected with drain electrodes(66), and is located in a pixel. |
