发明名称 |
WELL FOR CMOS IMAGER AND METHOD OF FORMATION |
摘要 |
A well region of a first conductivity type located in a substrate of the first conductivity type and below about half the channel length of an electrically active portion of a transistor gate is disclosed. The well region is laterally displaced from a charge collection region of a second conductivity type of a pinned photodiode.
|
申请公布号 |
US2009173975(A1) |
申请公布日期 |
2009.07.09 |
申请号 |
US20090402226 |
申请日期 |
2009.03.11 |
申请人 |
RHODES HOWARD E;PATRICK INNA;MAURITZSON RICHARD A |
发明人 |
RHODES HOWARD E.;PATRICK INNA;MAURITZSON RICHARD A. |
分类号 |
H01L31/112;H01L21/00;H01L27/10;H01L27/146 |
主分类号 |
H01L31/112 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|