| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a package for semiconductor device for enabling high density wiring. <P>SOLUTION: A semiconductor device package 10 includes wiring patterns 14 formed on the front and rear surfaces of a core substrate 12 and connected via a conductive part 18 formed in a through-hole. This semiconductor device package 10 is characterized in that the core substrate 12 is formed in the manner that a first through-hole 16 for the conductive part, a second through-hole 22, and a projected part 24 are formed integrally and two sheets of metal plate 20a, 20b having an insulating layer 26 formed on the front surface are formed through lamination allowing that the projected parts 24 of respective metal plates are going into the second through-hole 22 of the metal plate in the other side with each other, the front end of each projected part 24 is exposed to the front surface of the metal plate of the other side and is formed to a first terminal part 24a, and moreover a second terminal part 28 exposed from the insulating layer 26 is formed on the front surface in the side where the first terminal part 24a of the metal plate of the other side is exposed. <P>COPYRIGHT: (C)2009,JPO&INPIT</p> |
