| 摘要 |
<p>A flash memory device and a manufacturing method thereof are provided to reduce interference between memory cells by forming a floating gate as a structure in which conductive films of multilayer are laminated. A tunnel insulation film(102a) and a first conductive film(104) of amorphous are formed on a semiconductor substrate(100). An annealing process is performed in order to transform the first conductive film of amorphous into a first conductive film of crystalline. A second conductive film(104a) is formed on the first conductive film of crystalline. The second conductive film is patterned by a first etching process. An oxide film on the first conductive film of crystalline is removed by a second etching process. The first conductive film of amorphous is patterned by a third etching process. The first conductive film of amorphous is made of undoped polysilicon film.</p> |
