发明名称 |
PLASMA ETCHING METHOD, PLASMA ETCHING APPARATUS, CONTROL PROGRAM AND COMPUTER-READABLE STORAGE MEDIUM |
摘要 |
A plasma etching method for performing an etching process for forming on an insulating film formed on a substrate a hole shape having a ratio of depth to opening width of more than 20. The hole shape is formed on the insulating film by converting processing gas containing at least C4F6 gas and C6F6 gas into a plasma. A flow rate ratio of the C4F6 gas to the C6F6 gas (C4F6 gas flow rate/C6F6 gas flow rate) ranges from 2 to 11.
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申请公布号 |
US2009170335(A1) |
申请公布日期 |
2009.07.02 |
申请号 |
US20080341205 |
申请日期 |
2008.12.22 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
TANAKA SATOSHI;OOYA YOSHINOBU;YAMAZAKI FUMIO |
分类号 |
H01L21/3065 |
主分类号 |
H01L21/3065 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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