发明名称 Circuit and method of controlling input/output sense amplifier of a semiconductor memory device
摘要 An input/output sense amplifier (IOSA) controller of a semiconductor memory device includes an auto pulse generator and a latch enable signal generating circuit. The auto pulse generator generates an auto pulse signal having a first pulse shape. The latch enable signal generating circuit generates a first latch enable signal having a second pulse shape in response to an auto pulse signal in normal mode, and generates a second latch enable signal having a level shape that is enabled for long duration in response to the write enable bar signal in test mode. Accordingly, the semiconductor memory device including the IOSA controller may safely test a characteristic of the IOSA.
申请公布号 US7554866(B2) 申请公布日期 2009.06.30
申请号 US20070820836 申请日期 2007.06.21
申请人 SAMSUNG ELECTRONCIS CO., LTD. 发明人 MOON JANG-WON;LIM JONG-HYOUNG
分类号 G11C7/00;G11C7/10;H03F3/45 主分类号 G11C7/00
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