发明名称 Power amplifier circuit for peak envelope modulation of high frequency signal
摘要 A power amplifier circuit for peak envelope modulation of a high frequency signal is provided. The power amplifier circuit includes a transformer which receives a first signal greater than a predetermined level of an envelope of a carrier signal to generate a transformed signal, and a transistor which operates based on the transformed signal, receives a second signal, which is generated based on the carrier signal and has a direct current component, and amplifies the second signal according to the transformed signal to output an output signal.
申请公布号 US7554396(B2) 申请公布日期 2009.06.30
申请号 US20070783349 申请日期 2007.04.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM SEUNG WOO
分类号 H03G3/20 主分类号 H03G3/20
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