| 摘要 |
An electronic device can include a silicon nitride layer. In an embodiment, the silicon nitride layer can include boron, grains, or both. The silicon nitride layer may be used as part of a charge storage layer within a nonvolatile memory cell within the electronic device. In a particular embodiment, the boron within the silicon nitride layer may be no greater than approximately 9 atomic % of the layer. The boron can be incorporated into the silicon nitride layer as it is being formed. The layer can be formed using chemical vapor deposition, physical vapor deposition, another suitable formation process, or any combination thereof.
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