| 发明名称 |
Schottky barrier source/drain N-MOSFET using ytterbium silicide |
| 摘要 |
A method of fabricating an N-type Schottky barrier Source/Drain Transistor (N-SSDT) with ytterbium silicide (YbSi2-x) for source and drain is presented. The fabrication of YbSi2-x is compatible with the normal CMOS process but ultra-high vacuum, which is required for ErSi2-x fabrication, is not needed here. To prevent oxidation of ytterbium during ex situ annealing and to improve the film quality, a suitable capping layer stack has been developed.
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| 申请公布号 |
US2009163005(A1) |
申请公布日期 |
2009.06.25 |
| 申请号 |
US20090322932 |
申请日期 |
2009.02.09 |
| 申请人 |
NATIONAL UNIVERSITY OF SINGAPORE |
发明人 |
ZHU SHIYANG;CHEN JINGDE;LEE SUNGJOO;LI MING FU;SINGH JAGAR;ZHU CHUNXIANG;KWONG DIM-LEE |
| 分类号 |
H01L21/28;H01L21/285;H01L21/336;H01L29/47;H01L29/49;H01L29/51;H01L29/76;H01L29/78 |
主分类号 |
H01L21/28 |
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